@article{MENDOZA_Sastre_Del Oso_Hernández_Lizardi_Casados_Santana_2019, title={Pressure effects on the growth of Sb2Te3 thin films processed by DC and RF sputtering}, volume={5}, url={https://www.ijrdo.org/index.php/as/article/view/2950}, DOI={10.53555/as.v5i6.2950}, abstractNote={<p><em>In this work, are compare and analyze the surface structure, morphology and electrical properties of antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) thin films grown by Direct Current (DC) and Radio Frequency (RF) magnetron sputtering system, with the variation of deposit pressure (P<sub>d</sub>) from 5 to 15 mTorr. The Sb<sub>2</sub>Te<sub>3</sub> thin films were grown with a magnetron power of 60 W, a substrate temperature of 200 °C and deposited time of 60 minutes for all samples. Profilometry measurements, X-ray Diffraction (XRD), morphology by Scanning Electron Microscope (SEM), Energy Dispersive Spectrometry (EDS) and resistivity were carried out on the Sb<sub>2</sub>Te<sub>3</sub> thin films. </em><em>XRD results show that the Sb<sub>2</sub>Te<sub>3</sub> thin films prepared by </em><em>DC sputtering system have a higher crystalline quality respect to thin films deposited by RF sputtering</em><em> and the structural properties improved by the decreasing of the deposition pressure. M</em><em>orphology results revealed that when the work pressure in both sputtering systems decreased to 5 mTorr, the grains are more compacted. EDS analyses show that the atomic composition is</em><em> approximately 35% at of Te and 65% at of Sb</em> <em>in both sputtering systems. Finally, for DC sputtering or RF sputtering systems the resistivity of the thin films decreases is close to 5.8x10<sup>-4</sup> ohm-cm. </em></p&gt;}, number={6}, journal={IJRDO-Journal of Applied Science}, author={MENDOZA, ROGELIO and Sastre, Jorge and Del Oso, Alfredo and Hernández, María de los Ángeles and Lizardi, Jose and Casados, Gaspar and Santana, Guillermo}, year={2019}, month={Jul.}, pages={48-60} }